ELECTRON BEAM APPLICATION FOR MECHANICAL STRESS RELAXATION AND FOR SI-SIO2 INTERFACE STRUCTURAL
REGULATION
L.A. Matveeva, E.F. Venger, R.Yu. Holiney
Institute of Semiconductor Physics NAS Ukraine, Kyiv
In this work is shown that:
(i) The energies of critical points in the zone diagram of
the silicon substrate change under the radiationstimulation
relaxation of IMS that was shown by the
shifting the electroreflectance and RS spectra;
(ii) The Si-SiO2 interface structure is regulated under the
electron irradiation that was shown by the compression
of the location region of the plastic deformation to the
interface region;
(iii) For IMS relaxation and structural regulation of the
interface the electron irradiation with high energy is
more effective than that with energy less than the
threshold one for the silicon.
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